Body Diode Forward Voltage Variation with iss 8 C oss rss Figure 10. Capacitance Characteristics GEN G S Figure 11. Breakdown Voltage Variation with Temperature MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 9. On-Resistance Variation with Gate Figure 4.
On-Resistance Variation with Temperature -55° 10V DS 1.6 1.2 0.8 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. T, JUNCTION T EMPERATURE (☌) J Figure 3. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
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